MRF6P23190HR6
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6P23190HR6 Test Circuit Schematic
Z17, Z18 0.321″
x 0.782
″
Microstrip
Z19, Z20 0.404″
x 0.074
″
Microstrip
Z21, Z22 0.918″
x 0.081
″
Microstrip
Z23 0.346″
x 0.081
″
Microstrip
Z24 2.103″
x 0.081
″
Microstrip
Z25 0.037″
x 0.135
″
Microstrip
Z26 0.250″
x 0.300
″
Microstrip
Z27 0.563″
x 0.135
″
Microstrip
PCB Arlon CuClad 250GX-0300-55-22, 0.030″, εr
= 2.55
Z1, Z28 0.380″
x 0.081
″
Microstrip
Z2 0.850″
x 0.135
″
Microstrip
Z3 2.244″
x 0.081
″
Microstrip
Z4 0.186″
x 0.074
″
Microstrip
Z5, Z6 0.614″
x 0.081
″
Microstrip
Z7, Z8 0.570″
x 0.282
″
Microstrip
Z9, Z10 0.072″
x 0.500
″
Microstrip
Z11, Z12 0.078″
x 0.500
″
Microstrip
Z13, Z14 0.861″
x 0.050
″
Microstrip
Z15, Z16 0.187″
x 0.782
″
Microstrip
RF
INPUT
VBIAS
Z5
Z7
Z9
C1
Z4
Z6
Z8
C2
Z2
DUT
RF
Z28
OUTPUT
Z26
Z3
Z11
Z10
Z12
C14
C16
+
C6
VBIAS
B3
C15
+
Z14
C13
Z16
Z18
Z22
C4
Z24
C22
VSUPPLY
C28
+
R1
R2
C8
B4
Z13
Z20
C23
C24
C25
C26
Z15
Z17
Z21
C3
Z23
Z19
C17
VSUPPLY
C27
+
C7
C18
C19
C20
C21
Z25
Z27
C12
+
C5
B1
C9
C10
C11
+
B2
Z1
Table 5. MRF6P23190HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2, B3, B4
Ferrite Beads
2508051107Y0
Fair-Rite
C1, C2, C3, C4
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C5, C6, C7, C8
5.6 pF Chip Capacitors
ATC100B5R6CT500XT
ATC
C9, C13
0.01 μF, 100 V Chip Capacitors
C1825C103J1RAC
Kemet
C10, C14, C17, C22
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C11, C15
22 μF, 25 V Tantalum Capacitors
T491D226K025AT
Kemet
C12, C16
47 μF, 16 V Tantalum Capacitors
T491D476K016AT
Kemet
C18, C19, C20, C21, C23,
C24, C25, C26
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C27, C28
330 μF, 63 V Electrolytic Capacitors
NACZF331M63V
Nippon
R1, R2
240 Ω, 1/4 W Chip Resistors
CRCW12062400FKEA
Vishay
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相关代理商/技术参数
MRF6P24190HR5
功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P24190HR6
功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P24190HR6_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P27160H
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160H_06
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160H_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P27160HR5
功能描述:射频MOSFET电源晶体管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P27160HR6
功能描述:射频MOSFET电源晶体管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray